技术参数

• Part Status Obsolete
• Sensing Distance 0.315" (8mm)
• Sensing Method Reflective
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Current - Collector (Ic) (Max) 20 mA
• Current - DC Forward (If) (Max) 50 mA
• Output Type Phototransistor
• Response Time -
• Mounting Type Through Hole
• Package / Case 4-DIP Module
• Operating Temperature -35°C ~ 65°C
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.49.1050