- 产品型号 MT41K512M8V80AWC1
- 品牌 Micron Technology Inc.
- RoHS Yes
- 描述 IC DRAM 4GBIT PARALLEL DIE
- 分类 存储器
- 库存 1600
技术参数
- Part Status Obsolete
- DigiKey Programmable Not Verified
- Memory Type Volatile
- Memory Format DRAM
- Technology SDRAM - DDR3L
- Memory Size 4Gbit
- Memory Organization 512M x 8
- Memory Interface Parallel
- Write Cycle Time - Word, Page -
- Voltage - Supply 1.283V ~ 1.45V
- Operating Temperature 0°C ~ 95°C (TC)
- Mounting Type -
- Package / Case Die
- Supplier Device Package Die
- RoHS Status ROHS3 Compliant
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- ECCN EAR99
- HTSUS 8542.32.0036


