技术参数

• Part Status Obsolete
• Sensing Distance 0.106" (2.7mm)
• Sensing Method Through-Beam
• Output Configuration Phototransistor
• Current - DC Forward (If) (Max) 50 mA
• Current - Collector (Ic) (Max) 10 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Response Time 15µs, 15µs
• Operating Temperature -25°C ~ 85°C
• Mounting Type Through Hole
• Package / Case 4-DIP Module
• Type Unamplified
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.49.8000