Technical Details

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 12V
• Frequency - Transition 8GHz
• Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 2GHz ~ 4GHz
• Gain 10dB ~ 13.5dB
• Power - Max 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 35mA, 8V
• Current - Collector (Ic) (Max) 80mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 4-SMD (35 micro-X)
• Supplier Device Package 35 micro-X
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095