Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Common Drain
• FET Feature -
• Drain to Source Voltage (Vdss) -
• Current - Continuous Drain (Id) @ 25°C -
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds -
• Power - Max 1.7W
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 4-XFLGA
• Supplier Device Package 4-Picostar (1.31x1.31)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095