Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100 V
• Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 13.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
• Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
• FET Feature -
• Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 6-WSON (2x2)
• Package / Case 6-WDFN Exposed Pad
• ECCN EAR99
• HTSUS 8541.29.0095