Technical Details

• Part Status Active
• Memory Type Volatile
• Memory Format DRAM
• Technology SDRAM - Mobile LPDDR4X
• Memory Size 12Gbit
• Memory Organization 768M x 16
• Memory Interface Parallel
• Clock Frequency 2.133 GHz
• Write Cycle Time - Word, Page -
• Voltage - Supply 1.06V ~ 1.17V
• Operating Temperature -25°C ~ 85°C
• Mounting Type Surface Mount
• Package / Case 200-TFBGA
• Supplier Device Package 200-TFBGA (10x14.5)
• Moisture Sensitivity Level (MSL) 3 (168 Hours)