Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 25 V
• Current - Continuous Drain (Id) @ 25°C 20A (Ta), 105A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
• Rds On (Max) @ Id, Vgs 4.5mOhm @ 24A, 8V
• Vgs(th) (Max) @ Id 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 4.5 V
• Vgs (Max) +10V, -8V
• Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 12.5 V
• FET Feature -
• Power Dissipation (Max) 2.8W (Ta), 74W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-VSON-CLIP (3.3x3.3)
• Package / Case 8-PowerTDFN
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095