Technical Details

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 15A (Ta), 76A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Rds On (Max) @ Id, Vgs 8.9mOhm @ 10A, 4.5V
• Vgs(th) (Max) @ Id 1.15V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 4.5 V
• Vgs (Max) ±12V
• Input Capacitance (Ciss) (Max) @ Vds 1790 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 2.8W (Ta), 69W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-VSONP (3x3.3)
• Package / Case 8-PowerVDFN
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095