Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 25 V
• Current - Continuous Drain (Id) @ 25°C 21A (Ta), 81A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 5.1mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
• Vgs (Max) +16V, -12V
• Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 12.5 V
• FET Feature -
• Power Dissipation (Max) 3W (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-VSONP (5x6)
• Package / Case 8-PowerTDFN