Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature -
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 20A (Ta)
• Rds On (Max) @ Id, Vgs 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
• Vgs(th) (Max) @ Id 2.1V @ 250µA, 1.15V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 4.5V, 11.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 900pF @ 15V, 1632pF @ 15V
• Power - Max 6W (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-PowerLDFN
• Supplier Device Package 8-LSON (3.3x3.3)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095