Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Half Bridge)
• FET Feature Logic Level Gate, 5V Drive
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 40A (Ta)
• Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id 1.85V @ 250µA, 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V, 19.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12.5V, 2510pF @ 12.5V
• Power - Max 12W (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-PowerTDFN
• Supplier Device Package 8-VSON-CLIP (5x6)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095