Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Asymmetrical
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 20A
• Rds On (Max) @ Id, Vgs 6mOhm @ 12A, 8V
• Vgs(th) (Max) @ Id 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 15V
• Power - Max 6W
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-PowerTDFN
• Supplier Device Package 8-VSON (3.3x3.3)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• ECCN EAR99
• HTSUS 8541.29.0095