Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 P-Channel (Dual) Common Source
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) -
• Current - Continuous Drain (Id) @ 25°C 3.9A
• Rds On (Max) @ Id, Vgs 162mOhm @ 1A, 1.8V
• Vgs(th) (Max) @ Id 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 595pF @ 10V
• Power - Max 700mW
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 9-UFBGA, DSBGA
• Supplier Device Package 9-DSBGA
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095