Technical Details

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 15 V
• Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
• Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 5.45 nC @ 10 V
• Vgs (Max) +2V, -15V
• FET Feature -
• Power Dissipation (Max) 791mW (Ta)
• Operating Temperature -40°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-SOIC
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095